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| SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low Noise Figure NF=2.5dB,|S21e|2=14.5dB(f=500MHz) NF=3.0dB,|S21e|2=9.0dB(f=1GHz) +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 20 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain Symbol ICBO IEBO hFE Cob Cre fT Testconditons VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 10 mA 30 80 1.15 0.75 3.5 14.5 9 2.5 3 Min Typ Max 1 1 300 pF pF GHz dB dB dB dB Unit iA iA |S21e|2(1) VCE = 10 V, IC = 10 mA,f=500MHz S21e|2(2) VCE = 10 V, IC = 10 mA,f=1GHz Noise Figure NF(1) NF(2) VCB=10V, IC=5 mA, f=500MHz VCB=10V, IC=5 mA, f=1GHz Marking Marking MB +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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